? 1/6 table 1: main product characteristics i f(av) 2 x 15 a v rrm 120 v t j (max) 175c v f (typ) 0.57 v STPS30120C power schottky rectifier rev. 1 table 3: absolute ratings (limiting values, per diode) symbol parameter value unit v rrm repetitive peak reverse voltage 120 v i f(rms) rms forward voltage 30 a i f(av) average forward current = 0.5 t c = 145c per diode per device 15 30 a i fsm surge non repetitive forward current t p = 10ms sinusoidal 180 a p arm repetitive peak avalanche power t p = 1s t j = 25c 6700 w t stg storage temperature range -65 to + 175 c t j maximum operating junction temperature * 175 c * : thermal runaway condition for a diode on its own heatsink dptot dtj --------------- 1 rth j a ? () ------------------------- - > k k a2 a1 to-220ab STPS30120Ct k a1 a2 february 2005 features and benefits high junction temperature capability avalanche rated low leakage current good trade-off between leakage current and forward voltage drop description dual center tap schottky rectifier suited for high frequency switch mode power supply. packaged in to-220ab, this device is intended to be used in notebook & lcd adaptors, desktop smps, providing in these applications a margin between the remaining voltages applied on the diode and the voltage capability of the diode. table 2: order code part number marking STPS30120Ct STPS30120Ct
STPS30120C 2/6 table 4: thermal parameters table 5: static electrical characteristics (per diode) pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% to evaluate the conduction losses use the following equation: p = 0.59 x i f(av) + 0.01 i f 2 (rms) symbol parameter value unit r th(j-c) junction to case per diode total 2.2 1.3 c/w r th(c) coupling total 0.3 c/w when the diodes 1 and 2 are used simultaneously: t j (diode 1) = p(diode 1) x r th(j-c) (per diode) + p(diode 2) x r th(c) symbol parameter tests conditions min. typ max. unit i r * reverse leakage current t j = 25c v r = v rrm 15 a t j = 125c 2.5 7.5 ma v f ** forward voltage drop t j = 25c i f = 5a 0.74 v t j = 125c 0.57 0.61 t j = 25c i f = 15a 0.92 t j = 125c 0.7 0.74 t j = 25c i f = 30a 1.02 t j = 125c 0.83 0.89
STPS30120C 3/6 figure 1: average forward power dissipation versus average forward current (per diode) figure 2: average forward current versus ambient temperature ( = 0.5, per diode) figure 3: normalized avalanche power derating versus pulse duration figure 4: normalized avalanche power derating versus junction temperature figure 5: non repetitive surge peak forward current versus overload duration (maximum values, per diode) figure 6: relative variation of thermal impedance junction to ambient versus pulse duration 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 2 4 6 8 10 12 14 16 18 p (w) f(av) t =tp/t tp = 1 = 0.05 i (a) f(av) = 0.5 = 0.2 = 0.1 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 175 i (a) f(av) t =tp/t tp t (c) amb r =15c/w th(j-a) r=r th(j-a) th(j-c) 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (s) p p(t) p (1s) arm p arm 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 t (c) j p(t) p (25c) arm p arm 0 20 40 60 80 100 120 140 160 180 1.e-03 1.e-02 1.e-01 1.e+00 i (a) m i m t =0.5 t =25c c t =75c c t =125c c t(s) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 z/r th(j-c) th(j-c) t =tp/t tp t (s) p = 0.5 = 0.2 = 0.1 single pulse
STPS30120C 4/6 figure 7: reverse leakage current versus reverse voltage applied (typical values, per diode) figure 8: junction capacitance versus reverse voltage applied (typical values, per diode) figure 9: forward voltage drop versus forward current (per diode) 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 10 20 30 40 50 60 70 80 90 100 110 120 i (ma) r v (v) r t =125c j t =25c j t =50c j t =75c j t =100c j t =150c j 10 100 1000 1 10 100 c(pf) v (v) r f=1mhz v =30mv t =25c osc rms j 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i (a) fm v (v) fm t =25c (maximum values) j t =125c (maximum values) j t =125c (typical values) j
STPS30120C 5/6 figure 10: to-220ab package mechanical data a c d l7 dia l5 l6 l9 l4 f h2 g g1 l2 f2 f1 e m table 6: ordering information epoxy meets ul94, v0 cooling method: by conduction (c) recommended torque value: 0.8 m.n. maximum torque value: 1.0 m.n. ordering type marking package weight base qty delivery mode STPS30120Ct STPS30120Ct to-220ab 2.23 g 50 tube table 7: revision history date revision description of changes 18-feb-2005 1 first issue. ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 f2 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.4 typ. 0.645 typ. l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. 3.75 3.85 0.147 0.151
STPS30120C 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assu mes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replac es all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered tr ademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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